Optical beam-steering devices and methods utilizing surface scattering metasurfaces

ABSTRACT

Systems and methods are described herein for an optical beam-steering device that includes an optical transmitter and/or receiver to transmit and/or receive optical radiation from an optically reflective surface. An array of adjustable dielectric resonator elements is arranged on the surface with inter-element spacings less than an optical operating wavelength. A controller applies a pattern of voltage differentials to the adjustable dielectric resonator elements. The pattern of voltage differentials corresponds to a sub-wavelength reflection phase pattern for reflecting the optical electromagnetic radiation. One embodiment of a dielectric resonator element includes first and second dielectric members extending from the surface. The dielectric resonator elements are spaced from one another to form a gap or channel therebetween. A voltage-controlled adjustable refractive index material is disposed within the gap.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application claims the benefit of the earliest availableeffective filing date(s) from the following listed application(s) (the“Priority Applications”), if any, listed below (e.g., claims earliestavailable priority dates for other than provisional patent applicationsor claims benefits under 35 U.S.C. § 119(e) for provisional patentapplications, and for any and all parent, grandparent,great-grandparent, etc., applications of the Priority Application(s)).In addition, the present application is related to the “RelatedApplications,” if any, listed below.

If an Application Data Sheet (ADS) has been filed on the filing date ofthis application, it is incorporated by reference herein. Anyapplications claimed on the ADS for priority under 35 U.S.C. §§ 119,120, 121, or 365(c), and any and all parent, grandparent,great-grandparent, etc., applications of such applications are alsoincorporated by reference, including any priority claims made in thoseapplications and any material incorporated by reference, to the extentsuch subject matter is not inconsistent herewith.

PRIORITY APPLICATIONS

This application claims priority under 35 U.S.C. § 119 to U.S.Provisional Patent Application No. 62/462,105 filed on Feb. 22, 2017,titled “Optical Surface Scattering Antennas,” which is herebyincorporated by reference in its entirety. Moreover, each referencedescribed and/or identified in the provisional application is alsohereby incorporated by reference in its entirety.

RELATED APPLICATIONS

If the listings of applications provided above are inconsistent with thelistings provided via an ADS, it is the intent of the Applicant to claimpriority to each application that appears in the Priority Applicationssection of the ADS and to each application that appears in the PriorityApplications section of this application.

All subject matter of the Priority Applications and the RelatedApplications and of any and all parent, grandparent, great-grandparent,etc., applications of the Priority Applications and the RelatedApplications, including any priority claims, is incorporated herein byreference to the extent such subject matter is not inconsistentherewith.

TECHNICAL FIELD

This disclosure relates to reconfigurable antenna technology.Specifically, this disclosure relates to reconfigurable reflective-typeantenna elements operable at optical frequencies.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A illustrates a simplified embodiment of an optical surfacescattering antenna device with pairs of elongated dielectric memberswith adjustable refractive index material therebetween formingdielectric resonator elements.

FIG. 1B illustrates an example of single dielectric resonator elementextending from a substrate with an underlying reflective layer.

FIG. 1C illustrates simulated electric and magnetic energy densitieswithin the dielectric resonator element of FIG. 1B with excitation at80° relative to normal with transverse magnetic (TM) polarization.

FIG. 1D illustrates the reflection phase of the single dielectricresonator element of FIG. 1B as a function of the refractive index ofthe adjustable refractive index material.

FIG. 1E illustrates the reflection spectrum of the high-Q dielectricresonator element of FIG. 1B.

FIG. 2 illustrates an example representation of the beam-steeringcapabilities of an optical surface scattering antenna similar to theantenna illustrated in FIG. 1A.

FIG. 3 illustrates a simplified diagram of steerable beam of reflectedoptical radiation possible via an optical surface scattering antennasimilar to the antenna illustrated in FIG. 1A.

FIG. 4A illustrates a simplified embodiment of an array of paireddielectric members extending from a surface.

FIG. 4B illustrates a simplified embodiment of an adjustable refractiveindex material added to the array of paired dielectric members extendingfrom the surface.

FIG. 5A illustrates a simplified embodiment of an array of unpaireddielectric members extending from a surface.

FIG. 5B illustrates a simplified embodiment of an adjustable refractiveindex material added to the array of unpaired dielectric membersextending from the surface.

FIG. 6 illustrates a holographic metasurface, control logic, memory, andan input/output port to form a transmit and/or receive optical surfacescattering antenna system.

FIG. 7 illustrates an example of a dielectric resonator elementextending from a substrate, including an optically reflective layer andan electrically insulating layer.

FIG. 8 illustrates a simplified embodiment of an optical surfacescattering device with pairs of pillar dielectric members withadjustable refractive index material therebetween forming dielectricresonator elements.

FIG. 9 illustrates another simplified close-up view of a plurality ofdielectric resonator elements, including optically reflective patches,electrical connections, and an underlying control matrix for applyingvoltage differentials.

FIG. 10 illustrates a simplified block diagram of a dielectric resonatorelement with an underlying optically reflective patch, electricalconnections, control electronics, and a substrate.

FIG. 11A illustrates an example of a tunable optical surface scatteringantenna device with an optical transmitter or receiver.

FIG. 11B illustrates the transmitter (or receiver) transmitting (orreceiving) optical radiation via a steerable optical beam from thetunable optical surface that includes elongated wall dielectric members.

FIG. 11C illustrates the transmitter (or receiver) transmitting (orreceiving) optical radiation via a multi-directional steerable opticalbeam from the tunable optical surface that includes pillar dielectricmembers.

FIG. 12 illustrates an example embodiment of a packaged solid-statesteerable optical beam antenna system with an optically transparentwindow.

DETAILED DESCRIPTION

In various embodiments, reconfigurable antennas leverage metamaterialsurface antenna technology (MSAT). Metamaterial surface antennas, alsoknown as surface scattering antennas and Metasurface antennas, aredescribed, for example, in U.S. Patent Publication No. 2012/0194399,which publication is hereby incorporated by reference in its entirety.Additional elements, applications, and features of surface scatteringantennas that feature a reference wave or feed wave are described inU.S. Patent Publication Nos. 2014/0266946, 2015/0318618, 2015/0318620,2015/0380828 and 2015/0372389, each of which is hereby incorporated byreference in its entirety. Examples of related systems that utilize afree-space reference or feed wave are described in, for example, U.S.Patent Publication No. 2015/0162658, which application is also herebyincorporated by reference in its entirety.

Systems and methods described herein utilize a free-space feedconfiguration to illuminate a reflective surface. The reflective surfaceis populated with adjustable scattering elements. It is appreciatedthat, throughout the disclosure, for each disclosed embodiment thatinvolves illuminating a surface with a free-space reference wave toprovide a reflecting outgoing or transmitted wave having a specificfield pattern, a reciprocal embodiment is also contemplated thatinvolves reflecting an incoming or received wave from the surface andthen detecting the reflected wave according to the same specific fieldpattern. More generally, antenna systems and methods described hereinmay be used to transmit and receive via the same device (transceive),transmit only, receive only, or transmit via one device and receive viaa separate but similar device. For the sake of brevity, such devices andmethods may be described as only transmitting or only receiving with theunderstanding that other combinations of receiving and/or transmittingare contemplated.

The presently-described systems and methods operate at higherfrequencies than many of the publications described above. Specifically,the systems and methods described herein operate in at least theinfrared and/or visible frequencies. As used herein, near-infrared,infrared, visible, and near ultraviolet frequencies may be generallyreferred to as “optical” frequencies and wavelengths. When operationalfrequencies are scaled up to optical frequencies, the sizes of theindividual scattering elements and the spacings between adjacentscattering elements are proportionally scaled down to preserve thesubwavelength (e.g., metamaterial) aspect of the technology. Therelevant length scales for operation at optical frequencies may be onthe order of microns or smaller. Generally, the feature sizes aresmaller than typical length scales for conventional printed circuitboard (PCB) processes. Accordingly, many of the embodiments of thepresent disclosure may be manufactured using micro- and/ornano-lithographic processes, such as complementarymetal-oxide-semiconductor (CMOS) lithography, plasma-enhanced chemicalvapor deposition (PECVD), reactive ion etching, and the like.

Similarly, while many of the publications described above utilizemetallic structures with resonances suitable for radio frequencies(e.g., microwaves), such metallic structures become increasingly lossywith increasing frequencies. Accordingly, the present systems andmethods utilize substantially different structures formed fromdielectrics having primarily dielectric resonances.

Various applications of an optical surface scattering antenna asdescribed herein include, but are not limited to, imaging via lightdetection and ranging (LiDAR), imaging via structured illumination,free-space optical communication (e.g., single-beam andmultiple-input-multiple-output (MIMO) configurations), and pointing andtracking for free-space optical communications.

In various embodiments, a reconfigurable antenna aperture is populatedwith high-quality factor (high-Q) optical resonators. Modest changes inthe dielectric constant of a high-Q optical resonator result in asubstantial shift in the resonant wavelength(s) of the high-Q opticalresonator. The higher the Q factor, the greater the shift in resonancefor a given change in the dielectric constant. Assuming a fixedfrequency of operation near the resonance of the resonator, a scatteredfield from the resonator may vary in phase and/or amplitude as afunction of the tuned dielectric value of the resonator. Although thephase and amplitude are correlated through the Lorentzian resonance, thephase of the field over the aperture may be used for holographic and/orbeam-forming designs. The systems and methods described below allow forconsiderable control without additionally introduced phase-shifters.

The index modulation range of tunable dielectric material is limitedbased on material selection. An antenna aperture with an array oftunable radiating or scattering elements may have high-Q, low-loss,subwavelength resonators. Plasmonic resonators based on a patch antennageometry represent one possible approach where the tunability is enabledby an accumulation layer at a conductor-dielectric interface. However,the low-Q of the plasmonic resonators and high absorption of theplasmonic mode results in a poor reflection efficiency. The loss inplasmonic patch antennas can be reduced by reducing the Q-factor, butthis decreases tunability.

In various embodiments, tunable resonators for scattering and/orradiating are described herein that have a high-Q, are low-loss, and aresufficiently tunable to provide full or near-full phase control. As aspecific example, a surface may be configured with a plurality ofadjustable dielectric resonator elements. The inter-element spacing ofthe adjustable dielectric resonator elements may be less than, forexample, an optical operating wavelength within an operationalbandwidth. The surface may include an optically reflective surface toreflect optical electromagnetic radiation within the operationalbandwidth.

In one embodiment, one or more of the adjustable dielectric resonatorelements may include a first dielectric member extending from thesurface and a second dielectric member extending from the surface. Anadjustable refractive index material may be disposed in a gap betweenthe first and second dielectric members to form a dielectric resonatorelement. The dielectric resonator element can be tuned or adjusted byadjusting the adjustable refractive index material.

The first and second dielectric members may be elongated, pillar-shaped,rounded, squared, etc. In some embodiments, elongated dielectric membersmay extend from the surface as walls or ridges (e.g., perpendicular tothe surface or at an angle relative to the surface). The walls or ridgesmay run between two ends or edges of the surface. For example, a firstdielectric member may be formed as a first elongated wall, the seconddielectric member may be formed as a second elongated wall that issubstantially parallel to the first wall, and the adjustable refractiveindex material may be disposed within a channel defined by the first andsecond walls.

The first and second dielectric members may, alternatively, be formed asa pair of pillars (e.g., a first pillar and a second pillar). Pairs ofpillars may, for example, be arranged as an N×M array of pairs ofpillars, where N and M are integers greater than 1. An adjustablerefractive index material may be disposed between the first and secondpillars in each pair of pillars.

In some embodiments, each dielectric resonator element may include firstand second dielectric members extending from the surface. The first andsecond dielectric members may be elongated and spaced to form a channeltherebetween. An electrically adjustable refractive index material maybe disposed within the channel. A variable voltage differential may beapplied to the first and second dielectric members. The refractive indexof the adjustable refractive index material may be varied based on anapplied voltage differential. Each voltage differential may correspondto a different refractive index, and each refractive index maycorrespond to a unique reflection phase of the dielectric resonatorelement.

In various embodiments, the surface may comprise an optically reflectiveand electrically conductive surface, such as a metal surface. As aspecific example, the surface may comprise or include patches of copper.In some embodiments, the patches of copper are strategically positionedbeneath each dielectric resonator element on a substrate. The substratemay be optically transparent or absorb most of the energy at wavelengthswithin the operational bandwidth. In some embodiments, the substrate maybe substantially covered with a reflective metal. The material maydepend on the operational bandwidth and/or other desired properties ofreflectivity. Examples of suitable metals for various operationalbandwidths include copper, silver, gold, nickel, iridium, aluminum, etc.In some embodiments, reflective patches or reflective coatings on thesubstrate may be formed as high-reflective patches or coatings with morethan one layer of material (e.g., a first layer with a high index ofrefraction and a second layer with a low index of refraction).

As previously noted, the substrate may be entirely covered with areflective material. In other embodiments, the substrate itself maycomprise the reflective material (e.g., the dielectric pillars or wallsextend from a copper plate). In other embodiments, patches of reflectivematerial with dimensions corresponding to the dimensions of eachdielectric resonator element are positioned substantially beneath eachdielectric resonator element. In some embodiments, a non-conductivelayer (e.g., silicon dioxide) may separate the reflective patch or layer(which may be electrically conductive) from the dielectric members andadjustable refractive index material that form each dielectric resonatorelement.

The arrangement of dielectric resonator elements on the surface may bedescribed as a metasurface with each dielectric resonator elementfunctioning as a metamaterial device with sub-wavelength proportions forthe operational bandwidth. Accordingly, the inter-element spacingbetween adjacent dielectric resonator elements is generally less thanone wavelength of a smallest wavelength within the operational bandwidth(e.g., three-quarters of a wavelength or one-half of a wavelength). Insome embodiments, the inter-element spacing may be significantly lessthan one-half wavelength (e.g., one-fifth, one-tenth, or even less).

In the elongated wall embodiment described above, the dielectricresonator elements may be arranged in a one-dimensional array definedperpendicular to the elongated walls that extend from one end or edge ofthe surface to another end or edge of the surface. In some embodiments,the one-dimensional array of walls may be formed on a surface withoutboth edges, or even one edge, of the wall extending to the edge of thesurface. In some embodiments, substantially elongated walls may bearranged substantially parallel to one another with adjustablerefractive index material disposed therebetween. In some embodiments,the adjustable refractive index material is disposed between everyadjacent elongated, substantially parallel wall. In other embodiments,pairs of elongated walls may be closer to each other than adjacent,non-pair elongated walls. The adjustable refractive index material mayonly be disposed between paired elongated walls. Pairs of elongatedwalls may be arranged in an N×M array on the surface, where N and M areeach an integer larger than one.

The resonance of each dielectric resonator element may depend on theheight, width, and/or length of each dielectric wall. Accordingly, oneor more of the dimensions of the dielectric wall may selected to attaina target operational bandwidth, target resonance bandwidth, target Qfactor for the dielectric resonator element, and/or other functionality.

To provide a specific example, an elongated wall may extend from thesurface to a height of between approximately 300 and 1500 nanometers.For example, the elongated wall may extend from the surface to a heightof 300 nanometers in one embodiment. In another embodiment, theelongated wall may extend from the surface to a height of 500nanometers. In still other embodiments, walls elongated walls exceeding1500 nanometers may be used. The exact height of the elongated walls maybe adapted for a particular frequency or frequency band and/or to attainvarious target resonant characteristics as discussed below.

Each of the elongated walls may have a width between approximately 50and 300 nanometers. As an example, each of the elongated walls may havea width of approximately 100 nanometers. Each elongated wall may bespaced from each adjacent elongated wall by between approximately 40 and250 nanometers. The spacing between elongated walls may be uniform,patterned, random, or pseudorandom. In various embodiments, each of theelongated walls is spaced from each adjacent elongated wall by distancesbetween approximately 40 and 80 nanometers. That is, each of theelongated walls may be uniformly spaced from each adjacent elongatedwall by a spacing distance that is between approximately 40 and 80nanometers, or each of the elongated walls may be unevenly spaced fromadjacent elongated walls by distances between approximately 40 and 80nanometers.

In some embodiments, each discrete pair of elongated walls withadjustable refractive index material therebetween form a dielectricresonator element. As a specific example of such an embodiment, 100elongated walls may be paired as part of 50 dielectric resonatorelements. The spacing between paired elongated walls may be less thanthe spacing between adjacent, but non-paired elongated walls. Adjustablerefractive index material may be disposed between all of the elongatedwalls, or only between paired elongated walls.

In some embodiments, some or all of the dielectric resonator elementsmay share an elongated wall with another of the dielectric resonatorelements. In the extreme example, dielectric elements at the ends of arow of dielectric resonator elements (i.e., a one-dimensional array ofdielectric resonator elements) share only one elongated wall while allof the other dielectric resonator elements share both elongated walls.In such an embodiment, 100 elongated walls arranged substantiallyparallel to one another may be paired to form 99 dielectric resonatorelements in a one-dimensional array.

Regardless of the configuration or arrangement of elongated walls, theheight and width dimensions of each of the elongated walls may be basedon a target resonance and/or Q factor for a wavelength or wavelengthswithin the operational bandwidth. In one specific embodiment, each ofthe elongated walls extends from the optically reflective surface to aheight between approximately 400 and 600 nanometers, has a width betweenapproximately 80 and 120 nanometers, and a spacing between pairedelongated walls is between 40 and 80 nanometers. In such an embodiment,the distance between dielectric resonator elements may be less than onewavelength of the largest operational frequency. Thus, for anoperational bandwidth that includes infrared light near the visiblespectrum, the spacing between dielectric resonator elements (i.e., thespacing between non-paired elongated walls) may be less thanapproximately 350 nanometers.

For an operational bandwidth deeper into the infrared spectrum, thespacing between dielectric resonator elements may be less thanapproximately 500 nanometers. For an operational bandwidth that includesblue light, the width, height, and spacing between paired elongatedwalls may be adjusted for a target resonance and Q factor. Moreover, thespacing between dielectric resonator elements for an operationalbandwidth that includes blue light may be less than approximately 225nanometers.

While the above-described embodiments contemplate a one-dimensionalarray of elongated walls on a surface, in some embodiments, theelongated walls may be arranged in any number of columns having anynumber of rows to form an M×N array of dielectric resonator elements,with shared or unshared elongated walls. A matrix of circuitry may beutilized to selectively address each of the dielectric resonatorelements to supply a voltage differential between paired elongatedwalls. In still other embodiments, the elongated walls may be arrangedin concentric rings or as concentric sides of a polygon. For example,the elongated walls may be curved, such that the concentric rings arecircular. Alternatively, the elongated walls may be straight andarranged as concentric sides of a polygon such as a hexagon, octagon, orthe like.

Many of the above-described embodiments contemplate dielectric resonatorelements that are each formed by a pair of elongated walls (shared orunshared) with an adjustable refractive index material disposedtherebetween. In other embodiments, dielectric resonator elements may beformed by a pair of pillars with adjustable refractive index materialdisposed therebetween. For example, the pillars may have substantiallyrectangular bases that are not generally elongated. The rectangular baseof each pillar may be square or have a length that is only one to threetimes the width of the base. Similar to previously describedembodiments, each dielectric resonator element may comprise two distinct(i.e., unshared) pillars that form a pair of pillars with an adjustablerefractive index material disposed therebetween. In other embodiments,pillars may be shared by one or more neighboring dielectric resonatorelements.

In an M×N array of pillars where M and N are each greater than two, somepillars may be shared by four dielectric resonator elements. As aspecific example, five pillars having substantially square bases may bearranged with adjustable refractive index material therebetween to formfour dielectric resonator elements.

In some embodiments, the dielectric pillars may have substantiallyrectangular bases, but the sides may be flared in or out slightly. Insome embodiments, the bases may be referred to as being substantiallyrectangular, but actually have a rhombus-shaped base. In someembodiments, the base of each pillar may be the same or a differentshape than the top of each pillar, the walls may be planar or may beslightly convex or concave. In some embodiments, the base of each pillarmay be slightly larger or smaller than the top of each pillar, such thateach pillar may be shaped like a truncated pyramid or an invertedtruncated pyramid. Such variations in shape may, in some instances, be aproduct of manufacturing or etching. For example, an attempt to createrectangular bases using chemical etching of a dielectric material mayresult in slightly malformed pillars with rounded edges and bases andtops that may not have the same area. In many embodiments, the pillarsor elongated walls extend substantially perpendicular from the surface,but in other embodiments they may extend at an angle or at variousangles based on a desired functionality of the array.

Similar to previous embodiments, the length, height, and width of eachof the pillars may be selected to attain a target resonance and/or Qfactor for one or more wavelengths within an operational bandwidth. As aspecific example, a dielectric resonator element may be formed by twopillars that extend from a surface to a height of approximately 800nanometers, have a width between approximately 100 nanometers, and alength between approximately 225 nanometers. The exact heights, widths,and lengths of the dielectric resonator elements may be adapted for aparticular application, target resonance, target Q factor, functionalbandwidth, or other characteristic response. In various embodiments,dielectric resonator elements may be formed by two pillars that extendfrom a surface to a height between approximately 300 and 1500nanometers, have a width between approximately 50 and 300 nanometers,and have a length between approximately 150 and 2000 nanometers.

The paired pillars may be spaced from one another by a distance ofapproximately 50 to 300 nanometers and an adjustable refractive indexmaterial may be disposed therebetween. An M×N array (where M and N arepositive integers) of such dielectric resonator elements may be formedwith spacings between the various dielectric resonator elements beingbetween approximately 50 and 500 nanometers apart.

Whether each dielectric resonator element in an array of dielectricresonator elements is formed by two pillars or two elongated walls, aresonance and a Q factor may be selected for a particular frequencyband. Each of the plurality of dielectric resonator elements may beconfigured as a high-Q dielectric resonator element with a Q factorbetween approximately 10 and 100.

For instance, each of the plurality of dielectric resonator elements maycomprise a high-Q dielectric resonator element with a Q factor betweenapproximately 10 and 30. For example, each of the plurality ofdielectric resonator elements may be configured as a high-Q dielectricresonator element with a Q factor of approximately 20.

The spacing gap between the dielectric members (i.e., the pillars orwalls) of a dielectric resonator element may correspond to thefundamental harmonic mode of the frequencies within an optical operatingbandwidth. In such an embodiment, one antinode can be realized in thedistance between the gap. The height of the dielectric members maycorrespond to the fundamental harmonic mode of frequencies within theoptical operating bandwidth, such that one antinode can be realizedvertically within the gap.

Alternatively, the height of the dielectric members may be selected tocorrespond to the second order harmonic mode, such that two antinodescan be realized within the gap between the surface and the tops of thedielectric members. Similarly, the length of the parallel faces of thedielectric members (whether pillars or elongated walls) can be selectedto correspond to the fundamental harmonic mode (probably a pillarembodiment) or many harmonic orders (an elongated wall). Thus, the totalnumber of antinodes that can be formed within the adjustable refractiveindex material between two dielectric members is a function of the gapspacing, the vertical height from the surface, and the length of thedielectric members.

Any combination of heights, gap spacings, and lengths can be selected toattain fundamental, second order, third order . . . etc. harmonic modesin the given dimension. To further illustrate the point, the first andsecond dielectric members may extend from the surface to a heightcorresponding to an Nth order harmonic mode of frequencies within anoptical operating bandwidth, such that N antinodes can be realizedwithin the gap between the surface and tops of the dielectric membersforming the dielectric resonator element.

In various embodiments, the dielectric members may beelectromagnetically transparent within the operational bandwidth. Inmany embodiments, the dielectric members have a static or substantiallystatic index of refraction for each corresponding wavelength within theoperational bandwidth.

In various embodiments, the phase of the reflected electromagneticradiation (e.g., optical radiation) is dependent on the refractive indexof the adjustable refractive index material disposed between pairs ofdielectric members. The refractive index of the adjustable refractiveindex material is selected based on a bias voltage applied to one orboth dielectric members to create a voltage difference across theadjustable refractive index material.

A controller may be used to selectively apply voltage differentials tothe individual or groups of dielectric resonator elements in an array. Apattern of voltage differentials applied to an array of dielectricresonator elements corresponds to a pattern of indices of refraction ofthe dielectric resonator elements, which in turn corresponds to apattern of reflection phases of the dielectric resonator elements. Dueto the subwavelength spacing and element sizes of the dielectricresonator elements, a pattern of reflection phases of the dielectricresonator elements corresponds to a specific reflection pattern ofincident optical radiation. Thus, a set of patterns of applied voltagedifferentials corresponds to a set of reflection patterns of incidentoptical radiations. An applied voltage differential pattern can bedetermined for optical beamforming in both transmit and receiveapplications. A target beamform can be attained by applying adeterminable pattern of voltage differentials to the individual orgroups of dielectric resonator elements.

An example of a suitable adjustable refractive index material is liquidcrystal. In one specific embodiment, a voltage differential can bevaried between a first (low) voltage and a second (higher) voltage tovary the index of refraction of the liquid crystal by approximately tenpercent. Another suitable material for some applications is anelectro-optic polymer. Electro-optic (EO) polymer materials exhibit arefractive index change based on second order polarizability, known asthe Pockels effect, where the index modulation is proportional to theapplied static or radio frequency electric field. These materials aretypically small molecule organics doped into a polymer host, whichresults in excellent solution processability. The index modulation isgiven byΔn=½n ³ r ₃₃ E  Equation 1

In Equation 1, n is the linear refractive index, E is the appliedelectric field and r₃₃ is the Pockels coefficient. Since the electricfield is limited by dielectric breakdown, the goal of syntheticchemistry and materials development is to increase the Pockelscoefficient. State-of-the-art materials have Pockels coefficients of˜150 pm/V, resulting in a performance of Δn/n of approximately 2%. Moreexotic and recently-developed chemistries have resulted inelectro-optical polymers which could potentially achieve indexmodulation as large as 6%. Since the effect is due to a nonlinearpolarizability, the response time of electro-optical polymers isextremely fast (several fs), resulting in device modulation speedsof >40 GHz. Due to their large nonlinear coefficients compared withelectro-optic crystalline materials, such as lithium niobate,electro-optical polymers may be used as modulators, enablinghigh-density photonic integrated circuits.

A number of companies have commercialized the synthesis ofelectro-optical materials and their integration into Mach-Zendermodulators, such as Lightwave Logic and Soluxra. As a result, manychallenges associated with electro-optical polymers have been addressed,such as thermal stability, long-term operation, and the efficient poling(orientation) of the nonlinear molecules along the electric fielddirection. As a result, electro-optical materials can be used as anadjustable refractive index material in some applications. In someapproaches, electro-optical polymers may be suitable for applicationswhere MHz and GHz rate switching may be desired, such as LiDARsingle-beam scanning and structured illumination, or free-space opticalcommunications with holograms that simultaneously perform beamformingand data encoding (thus allowing multi-user MIMO schemes).

As previously noted, liquid crystals may be used as an adjustablerefractive index material in some embodiments as well. Liquid crystalsare a wide class of organic materials that exhibit anisotropy in therefractive index, which depends on molecular orientation and iscontrolled with an alternating current electric field. In thewidely-used nematic liquid crystals, modulation between theextraordinary and ordinary refractive index can be up to 13%, exceedingthe performance of electro-optical polymers. However, because the indexmodulation occurs due to physical reorientation of the entire molecule,the switching times in typical liquid crystal devices such as displaysare relatively slow (˜10 millisecond), limited by the rotationalviscosity and the elastic constant of the liquid. As compared tomicro-scale displays, the switching time of liquid crystals can besignificantly reduced in geometries with smaller electrode spacing andmaterials optimized for low viscosity, such that microsecond switchingtimes are possible in metasurface structures. The switching time ismostly limited by the on-to-off transition due to elastic relaxation,and consequently device geometries employing orthogonal electrodes canreduce the switching times even further.

The ubiquity of liquid crystal materials, their industrial production,and their robustness are major advantages of liquid crystals for usewith dynamic optical metasurfaces. In some approaches, a liquid crystalmaterial having a relatively low switching speed may be suitable toprovide dynamic holograms for free-space optical communications, wherethe optical beam may be steered on the time scale of transmitter andreceiver motion and vibration, typically on the millisecond timescale.In other approaches, a liquid crystal material having a relatively highswitching speed (e.g. as enhanced by the use of low viscosity liquidcrystals and/or counter-electrode geometries) may be suitable forscanning LiDAR and/or computational imaging based on structuredillumination where MHz speeds may be desired.

In still other embodiments, one or more types of chalcogenide glassesmay be used as the adjustable refractive index material. Chalcogenideglasses have a unique structural phase transition from the crystallineto the amorphous phase—which have strikingly different electrical andoptical properties—with index modulation in the shortwave infraredspectrum of over 30%.

The phase transition of chalcogenide glasses is thermally induced andmay be achieved through direct electrical heating of the chalcogenide.One example is Ge₂Sb₂Te₅ (GST), which becomes crystalline at ˜200° C.and can be switched back to the amorphous state with a melt-quenchingtemperature of ˜500° C. In addition to the large index modulationbetween these two states (˜30%), another attractive feature is that thematerial state is maintained in the absence of any additional electricalstimulus. For this reason, GST is nearing commercialization asnext-generation non-volatile electronic memory and has also beendemonstrated as a constituent of all-optical memory. In some approaches,a chalcogenide glass material may be suitable for applications where itis desired to only occasionally reconfigure the metasurface and yetprovide good thermal stability and environmental stability. For example,in free-space optical links, gradual drift of the transmitter orreceiver may be compensated by low duty-cycle changes to thebeam-pointing direction. At the same time, the large index modulation inthese materials allows for the use of lower-Q resonators, simplifyingdesign and easing fabrication tolerances.

The various metasurface architectures described herein may be fabricatedusing standard CMOS-compatible materials and processes. In embodimentsthat include a metal reflector under the dielectric pillars, the metalreflector may be made from aluminum, a CMOS-compatible metal, withoutsacrificing performance. In contrast, a plasmonic system may rely on thenoble metals gold and silver, which are more difficult to integrate intoCMOS manufacturing processes.

The dielectric members shaped like pillar or elongated wall structurescan be made of amorphous or poly-crystalline silicon via plasma-enhancedchemical vapor deposition (PECVD) followed by deep reactive ion etching.Fabrication may proceed with either electron-beam lithography forsmaller production volumes (e.g., for prototyping), or withphotolithography for larger production volumes (e.g. for commercialmanufacture). In the embodiments described herein, the minimum featuresize is about 100 nanometers, well within the limits of deep UVlithography. For example, 40-nanometer node technology is now acommodity process offered by many CMOS foundries, while custom foundryservices offered by Intel operate at the 14-nanometer node. Furthermore,several foundries have recently been established that focus specificallyon photonic-electronic integration, such as AIM Photonics.

As previously described, the feature sizes of the dielectric resonatorelements may be varied for an operational bandwidth that includes aportion of the visible light spectrum, the infrared spectrum, thenear-infrared spectrum, the short-wavelength infrared spectrum, themedium-wavelength infrared spectrum, the long-wavelength infraredspectrum, the far infrared spectrum, and various telecommunicationswavelengths like microwaves and beyond. In some embodiments, an array ofdielectric resonator elements may include a first set of elements for afirst frequency band and a second set of elements for a second frequencyband. One set or the other may be utilized depending on which frequencyband is operational at a given time. In other embodiments, both sets ofelements may be used simultaneously. Multiple sets of elements may beused for multiple frequency bands.

A transmitter may transmit optical radiation to the reflective surface.The reflective surface may reflect the transmitted optical radiationaccording to a reflection pattern (e.g., beamformed) based on a voltagedifferential pattern applied to the array of dielectric resonatorelements. Similarly, incident beamformed optical radiation may bereceived by the array of dielectric resonator elements based on theapplied voltage differential pattern. The received beamformed opticalradiation may be reflected to a receiver. In some embodiments, a firstarray of dielectric resonator elements may be used for transmitting anda second array of dielectric resonator elements may be used forreceiving. In other embodiments, a single array may be shared for bothreceiving and transmitting.

It is appreciated that a wide variety of materials may be used to formthe dielectric members that are paired to form a dielectric resonantmember. Examples of suitable materials for various operationalbandwidths include, but are not limited to, silicon (Si), germanium(Ge), gallium arsenide (GaAs), amorphous silicon (a-Si), the like, andcombinations thereof. As previously noted, the adjustable refractiveindex material may comprise liquid crystal material, an electro-opticalpolymer material, silicon, one or more chalcogenide glasses, the like,and combinations thereof.

The control functionality of the dielectric resonator elements may besimilar to the control of other metamaterial devices and metasurfaces.By controlling the phase (e.g., reflection phase) of individualsubwavelength elements, beamforming can be accomplished. Controlling theindividual elements may be accomplished by calculation, optimization,lookup tables, and/or trial and error. The disclosures referenced aboveand incorporated herein by reference provide some suitable examples forcontrolling individual elements. Other approaches known in the art maybe utilized as well. In fact, many existing computing devices andinfrastructures may be used in combination with the presently describedsystems and methods.

Some of the infrastructure that can be used with embodiments disclosedherein is already available, such as general-purpose computers, computerprogramming tools and techniques, digital storage media, andcommunication links. Many of the systems, subsystems, modules,components, and the like that are described herein may be implemented ashardware, firmware, and/or software. Various systems, subsystems,modules, and components are described in terms of the function(s) theyperform because such a wide variety of possible implementations exist.For example, it is appreciated that many existing programming languages,hardware devices, frequency bands, circuits, software platforms,networking infrastructures, and/or data stores may be utilized alone orin combination to implement a specific control function.

It is also appreciated that two or more of the elements, devices,systems, subsystems, components, modules, etc. that are described hereinmay be combined as a single element, device, system, subsystem, module,or component. Moreover, many of the elements, devices, systems,subsystems, components, and modules may be duplicated or further dividedinto discrete elements, devices, systems, subsystems, components ormodules to perform subtasks of those described herein. Any of theembodiments described herein may be combined with any combination ofother embodiments described herein. The various permutations andcombinations of embodiments are contemplated to the extent that they donot contradict one another.

As used herein, a computing device, system, subsystem, module, orcontroller may include a processor, such as a microprocessor, amicrocontroller, logic circuitry, or the like. A processor may includeone or more special-purpose processing devices, such asapplication-specific integrated circuits (ASICs), programmable arraylogic (PAL), programmable logic array (PLA), programmable logic device(PLD), field-programmable gate array (FPGA), or other customizableand/or programmable device. The computing device may also include amachine-readable storage device, such as non-volatile memory, staticRAM, dynamic RAM, ROM, CD-ROM, disk, tape, magnetic, optical, flashmemory, or another machine-readable storage medium. Various aspects ofcertain embodiments may be implemented using hardware, software,firmware, or a combination thereof.

The components of some of the disclosed embodiments are described andillustrated in the figures herein. Many portions thereof could bearranged and designed in a wide variety of different configurations.Furthermore, the features, structures, and operations associated withone embodiment may be applied to or combined with the features,structures, or operations described in conjunction with anotherembodiment. In many instances, well-known structures, materials, oroperations are not shown or described in detail to avoid obscuringaspects of this disclosure. The right to add any described embodiment orfeature to any one of the figures and/or as a new figure is explicitlyreserved.

The embodiments of the systems and methods provided within thisdisclosure are not intended to limit the scope of the disclosure but aremerely representative of possible embodiments. In addition, the steps ofa method do not necessarily need to be executed in any specific order,or even sequentially, nor do the steps need to be executed only once. Aspreviously noted, descriptions and variations described in terms oftransmitters are equally applicable to receivers, and vice versa.

FIG. 1A illustrates a simplified embodiment of an optical surfacescattering antenna device 100 with pairs 150-161 of elongated dielectricmembers with adjustable refractive index material therebetween formingdielectric resonator elements. As illustrated, the pairs 150-161 ofelongated dielectric members extend from an underlying substrate 190 andare elongated from one end or edge of the substrate 190 to the other. Inalternative embodiments, the substrate 190 may extend further than theelongated dielectric members.

FIG. 1B illustrates an example of single, subwavelength dielectricresonator element 150 extending from a substrate 190 with an underlyingreflective layer 195 and an electrically insulating layer 197. Asillustrated, the dielectric resonator element 150 comprises a firstelongated dielectric member 140 that extends up from the substrate 190,has a defined width, and a defined length. As can be more clearly seenin FIG. 1A, the elongated dielectric member 140 may extend between edgesof the substrate and/or at least be several times longer than it iswide.

A second opposing dielectric member 142 is substantially parallel to thefirst dielectric member 140. An adjustable (e.g., tunable) refractiveindex material 145 is disposed within a gap between the first 140 andsecond 142 dielectric members. In some embodiments, the adjustablerefractive index material 145 may be disposed all around the first 140and second 142 dielectric members, but it is at least disposed withinthe gap between the first 140 and second 142 dielectric members. Thewidth and height of the first 140 and second 142 dielectric members maybe selected to attain a specific resonant frequency tuning. Furthermore,the spacing between the first 140 and second 142 dielectric members andthe height of each of the first 140 and second 142 dielectric membersmay be selected to correspond to a fundamental harmonic mode, a secondorder harmonic mode, etc. The dimensions can be selected to attain atarget number of antinodes between the first 140 and second 142dielectric members across the gap and along the height of the gap.Similar dimension selections may be made with respect to the length ofthe first 140 and second 142 dielectric members.

As previously described, the dielectric members 140 and 142 may bemanufactured using silicon (Si), germanium (Ge), gallium arsenide(GaAs), amorphous silicon (a-Si), the like, and combinations thereof.The substrate 190 may be the same material or a different material. Insome embodiments, the various dielectric members, including the first140 and second 142 dielectric members may be manufactured using chemicaletching, bonding, micro-lithographic processes, nano-lithographicprocesses, CMOS lithography, PECVD, reactive ion etching, electron beametching, and/or the like.

The adjustable refractive index material 145 may comprise liquidcrystal. In other embodiments, the adjustable refractive index material145 may comprise one or more of an electro-optic polymer, liquidcrystals, a chalcogenide glass, and/or silicon. Each of these materialsmay have a static or quasi-static index of refraction for an operationalbandwidth (i.e., an optical operational bandwidth). However, by applyinga voltage to one or both of the first 140 and second 142 dielectricmembers, a voltage differential between the two dielectric members 140and 142 can subject the adjustable refractive index material 145 to anelectric field.

A material for the adjustable refractive index material 145 may beselected based on a desired tuning mechanism, refractive indexmodulation (shown as a percentage below), and typical frequencyresponse. Example values of four general categories of material areshown below in Table 1. It is, however, appreciated that differentvalues may be attained based on the specific species or properties of agiven material.

Typical Typical Material Tuning Mechanism Δn/n Frequency Electro-OpticPolymers Pockels Effect ≈2-4%  >10 GHz Liquid Crystals TunableBirefringence  ≈13% ≈100 Hz Chalcogenide Glasses Phase Change  ≈30% ≈100MHz Silicon Thermo-Optic Effect ≈0.3% ≈kHz-MHz

Many materials considerations and tradeoffs may be considered in theselection of the proper tunable material. One significant materialparameter is the relative refractive index modulation (Δn/n), whichultimately determines the achievable local phase shift of the element.Materials with larger index modulations allow for larger phase shiftsfor a given resonance Q factor. To achieve full phase modulation, theresonance Q factor of the element should be Q>n/Δn. Therefore, plasmonicstructures, which have modest resonator Q values limited by losses inmetals (Q<10) require materials with the largest index modulation. Onthe other hand, dielectric nanostructures can have much larger resonanceQ values, as we will show below, opening up the use of material setswith modest index modulation but fast switching speeds. In general,there is a tradeoff between index modulation and response speed of thematerial. Materials with the largest index modulation of ˜30%—such asliquid crystals—typically have response rates on the order of ˜100 Hz,while electro-optic polymers, based on the Pockels effect, typicallyhave index modulation of 6% or less, but with GHz response rates. At thesame time, the material should have low optical absorption at theoperating wavelength if phase holograms with high efficiency aredesired.

In various embodiments, the “surface” may be described as including thesubstrate 190, a reflective layer or patch 195, and/or an electricallyinsulating layer 197. In some embodiments, the reflective layer or patch195 may not be electrically conductive and so no insulating layer 197may be necessary. In other embodiments, the substrate 190 and thereflective layer 195 may be the same layer (i.e., the substrate may beoptically reflective).

FIG. 1C illustrates simulated electric 115 and magnetic 120 energydensities within the dielectric resonator element of FIG. 1B withexcitation at a grazing incidence angle of approximately 70-80° relativeto normal with transverse magnetic (TM) polarization. Atelecommunications wavelength of approximately 1,550 nanometers is usedfor the simulation.

The grazing incidence of the incident wave excites magnetic-like Mieresonances in the dielectric members (e.g., elongated silicon walls)with a high Q factor, enabling dynamic modulation of the phase.Additionally, the dielectric members are situated over a reflectivemetallic ground plane, making the structure operate as a reflect-array.Because the dielectric members themselves may have only weak mechanismsfor refractive index tuning, the illustrative resonator geometryconsists of two dielectric members with a core material disposedtherebetween that has a tunable or adjustable refractive index.

As illustrated, under the grazing incidence excitation, the electricfield 115 is strongly localized in adjustable refractive index materialbetween the first 140 and second 142 dielectric members, while themagnetic field 120 is strongly localized to the dielectric members 140and 142 themselves.

FIG. 1D illustrates the reflection phase of the single dielectricresonator element of FIG. 1B as a function of refractive index of theadjustable refractive index material. As illustrated, the reflectionphase of the dielectric resonator element can be varied significantlybased on the refractive index of the adjustable refractive indexmaterial. As illustrated, a phase modulation of nearly a is possiblewith a refractive index modulation of just 7%.

FIG. 1E illustrates the reflection spectrum of the high-Q dielectricresonator element of FIG. 1B. This high sensitivity to the refractiveindex of the core is enabled by the high-Q of the resonance (Q=64) inthe illustrated example. The devices described herein exhibit a highsensitivity of the reflection phase to the refractive index of theadjustable refractive index material disposed in the gap between thefirst and second dielectric members. This high sensitivity and theability to tune or adjust the refractive index material enables thecreation of dynamic metasurfaces.

In an illustrative embodiment, the high-Q dielectric resonances areutilized to define a one-dimensional beamforming hologram. The use of aone-dimensional hologram is for convenient illustration only, and otherembodiments provide a two-dimensional hologram. In one approach, thehologram phase may be calculated, for example, by using aGerchberg-Saxton algorithm, while imposing a phase-amplitude constraintin the plane of the hologram due to the Lorentzian resonant nature ofthe metasurface elements. The calculated phase at each dielectricresonant element is highly correlated with the refractive index of theadjustable refractive index of each dielectric resonant element.

By adjusting the refractive index, a pattern of refractive indices canbe attained that corresponds to a specific holograph phase. Therefractive index of each dielectric resonant element may be mapped to aspecific applied voltage differential. Accordingly, each pattern ofapplied voltage differentials corresponds to a unique pattern ofrefractive indices and a corresponding phase holograph.

FIG. 2 illustrates an example representation of the beam-steeringcapabilities of an optical surface scattering antenna similar to theantenna illustrated in FIG. 1A. Specifically, FIG. 2 shows the electricfield profile of the incident wave (grazing angle) and the reflectedoutgoing wave. As illustrated, a single beam is formed in the targetdirection of θ=−10°. The far-field intensity profile shows that a singlebeam is formed in that direction with minimal side lobes. The efficiencyof the transmission may be approximately 35%, defined as the fraction ofincident light directed into the target beamform, including losses dueto absorption.

The far-field patterns from other target directions are also shown,demonstrating that a dynamic holograph is possible. The appearance ofsignificant side lobes is likely due to artifacts of aliasing,discretization, and/or inter-element coupling. These artifacts can bemitigated by employing one or more of the artifact-reduction approachesdescribed in the references incorporated by reference above.

FIG. 3 illustrates a simplified diagram of steerable beam 350 ofreflected optical radiation possible via an optical surface scatteringantenna 300 similar to the antenna illustrated in FIG. 1A.

FIG. 4A illustrates a simplified embodiment of an array 400 of twelvepaired dielectric members 401/403, 405/407, 411/413, 415/417, 421/423,425/427, 431/433, 435/437, 441/443, 445/447, 451/453, and 455/457(collectively 401-457) extending from a surface 490. The simplifiedarray 400 shows only twelve paired dielectric members. Functionalembodiments may include thousands, tens of thousands, hundreds ofthousands, or even millions of paired dielectric members. For example,an antenna that is 3 centimeters wide may include tens of thousands ofpaired dielectric members. (e.g., approximately 45,000 for 700-nanometerdevices). Larger antennas may include a proportionally larger number ofdielectric members depending on the feature sizes for a givenoperational bandwidth.

FIG. 4B illustrates the simplified embodiment of FIG. 4A with anadjustable refractive index material 475 added to the array 400 ofpaired dielectric members 401-457 extending from the surface 490. Aspreviously noted, the surface 490 may be a silicon or germaniumsubstrate, may be or include a reflective layer (e.g., copper orsilver), and/or may include an electrically-insulating material toinsulate at least one dielectric member of each pair of dielectricmembers 401-457. In some embodiments, one dielectric member of each pairof dielectric members 401-457 may be electrically connected to thereflective layer that serves as an electrical ground. The otherinsulated dielectric member of each pair of dielectric members 401-457may be connected to an electric lead.

A controller may selectively provide voltage values to each of theinsulated dielectric members to induce an electric field within theadjustable refractive index material 475 in the region (gap) betweeneach pair of dielectric members 401-457. By varying the applied voltagepattern to the various pairs of dielectric members 401-457, a targetreflection pattern for incident optical radiation may be attained. Eachpair of dielectric members 401-457 and the adjustable refractive indexmaterial 475 therebetween functions as a subwavelength dielectricresonator element whose refractive index can be varied with time basedon a control voltage input. Accordingly, the simplified array 400includes twelve elongated subwavelength dielectric resonator elements.

FIG. 5A illustrates a simplified embodiment of an array 500 oftwenty-four unpaired dielectric members 510, 520-541, and 550 extendingfrom a surface 590. The unpaired dielectric members 510, 520-541, and550 can be used to form twenty-three subwavelength dielectric resonatorelements, once an adjustable refractive index material is positionedbetween each of the unpaired dielectric members 510, 520-541, and 550.In such an embodiment, each of the dielectric members 520-541 is sharedby two dielectric resonator elements, while the two end dielectricmembers 510 and 550 are not shared.

FIG. 5B illustrates the simplified embodiment of the array 500 with anadjustable refractive index material 575 added between each of theunpaired dielectric members 510, 520-541, and 550 to form twenty-threetunable dielectric resonator elements. Each of the dielectric members510, 520-541, and 550 may be connected to an electrical lead to providea specific voltage value and thereby induce a desired electric fieldwithin the adjustable refractive index material 575 between adjacentdielectric members 510, 520-541, and 550. In some embodiments, an entireantenna array may comprise unpaired dielectric members that areuniformly spaced such that the voltage values applied from one end tothe other are continuously increasing. In other embodiments, sets of aspecific number of unpaired dielectric members with adjustablerefractive index material disposed therebetween may be replicatedmultiple times to form an antenna array.

For example, assuming a voltage differential of between 0.0 and 0.5volts is desired between each adjacent set of dielectric members, thenfor the illustrated embodiment that includes twenty-four dielectricmembers, the voltage would need to range from −6 volts at one end (e.g.,dielectric member 510) to +5.5 volts at the other end (dielectric member550). In some embodiments, a 0.5 voltage differential may not provide asufficient range of adjustability of the refractive index of theadjustable refractive index material 575 and so a larger voltage rangemay be used.

However, voltages that exceed a certain limit may arc between dielectricmembers. Accordingly, a fewer number of dielectric members may be sharedand these small sets of shared dielectric members may be replicated manytimes. For example, up to a 6-volt differential may be attained betweenadjacent dielectric members in a set of five shared dielectric membersusing total voltage range between −12 volts and +12 volts. The set offive shared dielectric members, controllable between 12-volt rails, maybe replicated many thousands of times on a surface to provide an arrayof subwavelength dielectric resonator elements that each share at leastone dielectric member with an adjacent subwavelength dielectricresonator element.

FIG. 6 illustrates a holographic metasurface 650 with a dozensubwavelength dielectric resonator elements 601-612. In the illustratedembodiment, each dielectric resonator element 601-612 includes twopaired dielectric members that extend from a substrate 690 and areelongated between opposing edges of the substrate 690. Control logic652, memory 654, and an input/output port 656 may be paired with theholographic metasurface 650 to form a transmit and/or receive opticalsurface scattering antenna system.

The control logic may provide voltage signals to each dielectric memberto create an electric field within the adjustable refractive indexmaterial of each of the dielectric resonator elements 601-612. In someembodiments, one of the dielectric members of each of the dielectricresonator elements 601-612 may be connected to ground. Regardless, apattern of voltage differentials may be generated by the control logicto attain a specific pattern of refractive indices that corresponds to atarget reflection pattern of the optical surface scattering antennasystem.

FIG. 7 illustrates a very specific example of a dielectric resonatorelement 700 configured to operate in a narrow bandwidth that includesinfrared light at 905 nanometers. In the specific embodiment, paireddielectric members (first dielectric member 703 and second dielectricmember 705) are formed from amorphous silicon (a-Si) and extend from thesurface by approximately 480 nanometers. The surface includes a25-nanometer oxide insulating layer 791, a 150-nanometer copperreflector 792, and a silicon wafer substrate 793.

A gap 704 between the first 703 and second 705 dielectric members may beapproximately 60 nanometers wide and be filled with a liquid crystal orvoltage-tunable polymer. A 3-bit voltage controller may apply a voltagedifferential between 0 and 10 volts (−5 volts to +5 volts) to select adesired effective refractive index of the dielectric resonator element700 that is highly correlated with the voltage-tunable liquid crystal orpolymer. A desired Q factor of the dielectric resonator element 700 isselected based on the height of the dielectric members 703 and 705(shown as 480 nanometers) and the widths of each of the dielectricmembers (shown as 100 nanometers).

A plurality (i.e., thousands) of dielectric resonator elements like thedielectric resonator element 700 in FIG. 7 may be arranged in an arraywith a device pitch of approximately 400 nanometers. The dielectricresonator elements may be elongated and arranged in a one-dimensionalarray, similar to the embodiment shown in FIG. 1A, or they may have ashorter length and be arranged in a two-dimensional array as show anddescribed in subsequent figures below.

FIG. 8 illustrates a simplified embodiment of an optical surfacescattering device 800 with one hundred and ninety-two pillar-shapeddielectric members (lighter shading) arranged in ninety-six pillar pairswith adjustable refractive index material (darker shading) therebetweento form ninety-six dielectric resonator elements 801-896 (only some ofwhich are labeled to avoid obscuring the drawing). Each of thepillar-shaped dielectric resonator elements 801-896 is configured with atarget Q factor. The target Q factor is achieved based on the materialof the dielectric resonator element, the height to which eachpillar-shaped dielectric member extends from the surface 890, and thewidth of each pillar-shaped dielectric member.

The dielectric resonator elements shown in FIG. 1 include elongateddielectric walls with channels formed therebetween and so are arrangedin a one-dimensional array. In some embodiments, multipleone-dimensional arrays similar to the array illustrated in FIG. 1 can bearranged to form a two-dimensional array. In contrast, the pillar- ortower-shaped dielectric resonator elements 801-896 shown in FIG. 8 canbe arranged in a two-dimensional array on a single substrate to providetwo dimensions of control of the optical reflection pattern. That is,each of the dielectric resonator elements 801-896 is subwavelength innature and a pattern of applied voltage differentials can be used toselect a pattern of refractive indices of each of the subwavelengthdevices. Accordingly, a target reflection pattern can be selected basedon the pattern of applied voltage differentials.

FIG. 9 illustrates a different example of a simplified, close-upcut-away view of a plurality of dielectric resonator elements 900 on asurface 990, including dielectric resonator element 950. Each dielectricresonator element, including dielectric resonator element 950 comprisespaired dielectric members 940 and 942 with a voltage-controlledadjustable refractive index material 945 disposed therebetween.Electrical connections 965 allow for a controller to apply uniquevoltage differential to each of the plurality of dielectric resonatorelements.

An optically reflective patch 970 is positioned beneath each dielectricresonator element as well. In various embodiments, an insulating layermay separate the paired dielectric members 940 and 942 from theoptically reflective patch 970 in embodiments in which it iselectrically conductive (e.g., copper, gold, silver, etc.).

FIG. 10 illustrates a simplified block diagram 1000 of a dielectricresonator element 1050 with an underlying optically reflective patch1070, electrical connections 1027 and 1028, control electronics (shownas poly gate 1030 and doped silicon substrate 1015). In the illustratedembodiment, specific example dimensions are provided but it isappreciated that the dimensions may be varied for a particularapplication and/or operational bandwidth. In the illustrated example, anarray of dielectric resonator elements 1050 may be arranged with a500-nanometer pitch.

Each dielectric resonator element 1050 may include opposing amorphoussilicon pillars 1040 and 1042 that have a width of approximately 120nanometers and extend from the surface 1090 by approximately 550nanometers. An adjustable (e.g., voltage-tunable or heat-tunable, orphase-tunable) refractive index material 1045 may be positioned within agap between the amorphous silicon pillars 1040 and 1042. The gap betweenthe amorphous silicon pillars 1040 and 1042 may be approximately 70nanometers.

In some embodiments, the copper reflector 1070 may be a copper layerthat extends across the entire surface. In such embodiments, the metal1027 and 1028 that connect to the amorphous silicon pillars 1040 and1042 may pass through insulated thru-bores in the copper reflector 1070.

In addition to materials compatibility with CMOS processes, the geometryof the metasurface elements is such that it can be fabricatedmonolithically over the control electronics. In one approach, eachelement is addressed individually, and the individual addressing may beachieved with an active or passive matrix addressing scheme, dependingon the tuning mechanism utilized. In the case of liquid crystals,passive matrix addressing can be utilized since the molecularorientation has some memory, on the scale of several milliseconds.Passive matrix addressing is also compatible with chalcogenide glasses,since they have long-term memory.

In other embodiments, active matrix addressing may be preferable forimplementations that use electro-optical polymers, as they have anextremely fast (several fs) response time. Thus, each element caninclude a storage capacitor or similar structure to keep the appliedvoltage. In at least one illustrative embodiment described herein, theelement pitch is approximately 700 nanometers, which is much larger thanstate-of-the-art DRAM and SRAM memory cells, and is also on a similarscale to pixel pitch of modern CMOS imaging sensors, which have atypical pixel size of 1000 nanometer.

Some embodiments may be created via a fabrication process suitable forlarge-scale commercial fabrication. For example, a first step mayinclude fabricating CMOS transistors in the crystalline silicon wafer.Then the transistors can be connected to the word and bit lines of theactive or passive matrix using a patterned metallization layer. Duringthe metallization steps, metallic vias can also be formed to eachcontrol capacitor, which will later connect to dielectric pillars. Themetal interconnect and via layers can be planarized with oxidedeposition followed by chemical mechanical polishing, which can achievesub-nanometer surface flatness. Finally, the metal reflector anddielectric (e.g., silicon) pillars can be fabricated on the planarizedcontrol electronics, as described above, with each sub-pillar connectedto the exposed vias.

The above-described fabrication processes are entirely CMOS compatible.As the final step, the tuning material can be integrated into the gapsbetween the pillars. Liquid crystals and electro-optical polymers can bedeposited directly via spin coating, and will fill the cores viacapillary action, so long as the surface is prepared appropriately to beeither hydrophobic or hydrophilic, depending on the material. In thecase of chalcogenide glass such as GST, sputtering can be employed,followed by a masked wet or dry etch to remove the GST from all areasexcept inside the pillar cores.

FIG. 11A illustrates an example of a system 1100 that includes a tunableoptical surface scattering antenna device 1150 with an opticaltransmitter and/or receiver 1175 mounted to a base 1110. The opticaltransmitter and/or receiver 1175 may be configured to transmit opticalradiation to and/or receive optical radiation from the tunable opticalsurface scattering antenna device 1150 at a grazing angle of incidence(e.g., between 60 and 89 degrees). The tunable optical surfacescattering antenna device 1150 may be configured according to anycombination of embodiments described herein.

For instance, the tunable optical surface scattering antenna device 1150may be configured with a plurality of elongated dielectric resonatorelements arranged in a one-dimensional array with paired elongatedwall-like dielectric members with adjustable refractive index materialdisposed therebetween. Alternatively, the tunable optical surfacescattering antenna device 1150 may be configured with a plurality ofpillar-like dielectric resonator elements arranged in a two-dimensionalarray with unpaired pillar-shaped dielectric members with adjustablerefractive index material disposed therebetween.

FIG. 11B illustrates the transmitter 1175 (or receiver) transmitting (orreceiving) optical radiation 1180 at a grazing angle via a reflected,steerable optical beam 1185 from the tunable optical surface 1151 thatincludes elongated wall dielectric members. The beam 1185 may beadjusted in one direction as shown by the X-Z arrows.

FIG. 11C illustrates the transmitter 1175 (or receiver) transmitting (orreceiving) optical radiation 1180 at a grazing angle via a reflected,multi-directional steerable optical beam 1195 from the tunable opticalsurface 1152 that includes pillar dielectric members arranged in atwo-dimensional array.

FIG. 12 illustrates an example embodiment of a packaged solid-statesteerable optical beam antenna system 1200 with an optically transparentwindow 1250. The illustrated embodiment may include a transmitter,receiver, and/or a transceiver within the package that are in opticalcommunication with one or more tunable optical surface scatteringantenna devices. For example, a transceiver may be paired with a singletunable optical surface scattering antenna device. Alternatively, thepackage may include a discrete transmitter and a discrete receiver thatare each in communication with their own tunable optical surfacescattering antenna device—one for receiving and one for transmitting.The package may protect the sensitive components and the opticallytransparent window 1250 may allow for a steerable beam to be steered atvarious angles in one or two dimensions, depending on the type oftunable optical surface scattering antenna device employed.

This disclosure has been made with reference to various exemplaryembodiments, including the best mode. However, those skilled in the artwill recognize that changes and modifications may be made to theexemplary embodiments without departing from the scope of the presentdisclosure. While the principles of this disclosure have been shown invarious embodiments, many modifications of structure, arrangements,proportions, elements, materials, and components may be adapted for aspecific environment and/or operating requirements without departingfrom the principles and scope of this disclosure. These and otherchanges or modifications are intended to be included within the scope ofthe present disclosure.

This disclosure is to be regarded in an illustrative rather than arestrictive sense, and all such modifications are intended to beincluded within the scope thereof. Likewise, benefits, other advantages,and solutions to problems have been described above with regard tovarious embodiments. However, benefits, advantages, solutions toproblems, and any element(s) that may cause any benefit, advantage, orsolution to occur or become more pronounced are not to be construed as acritical, required, or essential feature or element. This disclosureshould, therefore, be determined to encompass at least the followingclaims.

What is claimed is:
 1. An optical beam-steering device, comprising: anoptical electromagnetic radiation converter to convert between electricpower and optical electromagnetic radiation; a surface to reflect theoptical electromagnetic radiation; a plurality of adjustable dielectricresonator elements arranged on the surface with inter-element spacingsless than an optical operating wavelength to selectively apply asub-wavelength reflection phase pattern to the optical electromagneticradiation.
 2. The device of claim 1, further comprising a controller toselectively apply a pattern of voltages to the plurality of dielectricresonator elements, wherein the pattern of voltages corresponds to apattern of reflection phases of the plurality of dielectric resonatorelements.
 3. The device of claim 1, wherein each of the dielectricresonator elements comprises: a first dielectric member extending fromthe surface; a second dielectric member extending from the surface; andan adjustable refractive index material disposed in a gap between thefirst and second dielectric members.
 4. The device of claim 3, whereinthe first dielectric member comprises a first elongated wall, the seconddielectric member comprises a second elongated wall that issubstantially parallel to the first wall, and the adjustable refractiveindex material is disposed within a channel defined by the first andsecond walls.
 5. The device of claim 4, wherein each of the first andsecond elongated walls have a length corresponding to an Nth harmonicmode of frequencies within an optical operating bandwidth, such that Nantinodes can be realized along the length of the gap between the firstand second elongated walls, where N is an integer.
 6. The device ofclaim 5, wherein each of the first and second elongated walls extendsfrom the surface to a height corresponding to an Mth order harmonic modeof frequencies within the optical operating bandwidth, such that Mantinodes can be realized within the gap between the surface and tops ofthe first and second elongated walls, where M is an integer.
 7. Thedevice of claim 5, wherein the spacing gap between the first and secondelongated walls corresponds to a fundamental harmonic mode offrequencies within the optical operating bandwidth.
 8. The device ofclaim 3, wherein the first dielectric member comprises a first pillar,the second dielectric member comprises a second pillar, and theadjustable refractive index material is disposed between the first andsecond pillars.
 9. The device of claim 3, wherein each of the first andsecond dielectric members extends substantially perpendicular from thesurface.
 10. The device of claim 3, further comprising a controller toselectively apply voltage differentials to the first and seconddielectric members of each of the dielectric resonator elements, whereineach of a plurality of selectable voltage differentials corresponds to(i) an index of refraction of the adjustable refractive index material,and (ii) a reflection phase of each of the respective dielectricresonator elements.
 11. The device of claim 1, wherein each of theplurality of dielectric resonator elements comprises: a first dielectricmember extending from the surface; a second dielectric member extendingfrom the surface, wherein the first dielectric member and the seconddielectric member are spaced from one another to form a channeltherebetween; an electrically adjustable refractive index materialdisposed within at least a portion of the channel; and electricalcontacts to receive an applied voltage differential to the first andsecond dielectric members, wherein application of a first voltagedifferential to the first and second dielectric members corresponds to afirst reflection phase, and wherein application of a second voltagedifferential to the first and second dielectric members corresponds to asecond reflection phase.
 12. The device of claim 1, wherein the opticalbeam-steering device comprises a transmission device with the opticalelectromagnetic radiation converter configured to convert electric powerinto optical electromagnetic radiation.
 13. The device of claim 1,wherein the optical beam-steering device comprises a receiving devicewith the optical electromagnetic radiation converter configured toconvert optical electromagnetic radiation into electric power.
 14. Thedevice of claim 1, wherein the optical beam-steering device comprises atransceiver configured to switch between receiving and transmittingoptical electromagnetic radiation.
 15. The device of claim 1, whereinthe optical beam-steering device comprises a laser to transmit opticalelectromagnetic radiation and a photodiode to receive opticalelectromagnetic radiation.
 16. The device of claim 1, wherein each ofthe dielectric resonator elements comprises: a first elongated wall; asecond elongated wall; and an adjustable refractive index materialdisposed within a channel defined between the first and second elongatedwalls.
 17. The device of claim 16, wherein the dielectric resonatorelements are arranged in a two-dimensional array.
 18. The device ofclaim 16, wherein each of the elongated walls extends from the surfaceto a height between approximately 300 and 1500 nanometers.
 19. Thedevice of claim 16, wherein each of the elongated walls extends from thesurface to a height between approximately 500 nanometers.
 20. The deviceof claim 16, wherein each of the elongated walls has a width betweenapproximately 50 and 300 nanometers.
 21. The device of claim 16, whereineach of the elongated walls has a width of approximately 100 nanometers.22. The device of claim 16, wherein each of the elongated walls isspaced from each adjacent elongated wall by between approximately 40 and250 nanometers.
 23. The device of claim 16, wherein each of theelongated walls is uniformly spaced from each adjacent elongated wall bya spacing distance that is between approximately 50 and 300 nanometers.24. The device of claim 16, wherein each of the elongated walls isunevenly spaced from adjacent elongated walls by distances betweenapproximately 50 and 300 nanometers.
 25. The device of claim 1, whereineach of the dielectric resonator elements comprises: a first pillarhaving a substantially rectangular base; a second pillar havingsubstantially rectangular base; and an adjustable refractive indexmaterial disposed between the first and second pillars.
 26. The deviceof claim 25, wherein each of the first and second pillars aresubstantially cuboid in shape.
 27. The device of claim 26, wherein alength, height, and width of each of the first and second pillars arebased on a target resonance for a wavelength within an operationalbandwidth.
 28. The device of claim 26, wherein a length, height, andwidth of each of the first and second pillars are based on a targetresonance and Q factor for a wavelength within an operational bandwidth.29. The device of claim 26, wherein each of the first and second pillarsextends from the surface to a height between approximately 300 and 1500nanometers.